张立宁

职称:助理教授
电话:0755-26038893
办公室:A321
Email:eelnzhang@pronghornmethod.com,lnzhang@ieee.org
美高梅登录网站:
MGM美高梅研究方向:新型逻辑及存储器件、电子设计自动化EDA、神经形态器件和计算系统
职称 助理教授 电话 0755-26038893
办公室 A321 Email eelnzhang@pronghornmethod.com,lnzhang@ieee.org
MGM美高梅研究方向 新型逻辑及存储器件、电子设计自动化EDA、神经形态器件和计算系统 美高梅登录网站

导师与MGM美高梅研究领域、方向:

西安交通大学   电子科学与技术      学士

香港科技大学   电子及计算机工程    博士

麦吉尔大学     物理系          访问学者

香港科技大学   电子及计算机工程    MGM美高梅研究助理教授 (至2017.12)

深圳大学      电子科学与技术     副教授 (至2020.03)


IEEE Senior Member, IEEE EDS Technical Committee Member (Compact Modeling), 国际会议IEEE EDTM 技术委员会成员/分会主席,IEEE JEDS 客座编辑(2018)。获得华为优秀合作成果奖(2023)IEEE EDSSC最佳论文奖(2019)William Mong纳米科学与技术杰出论文奖(2012)等。指导学生获得IEEE EDSSC最佳学生论文奖(2018)EDA技术团体标准牵头人。

MGM美高梅研究领域为模型驱动的下一代计算系统,涉及新型微纳尺度半导体器件的物理、器件模型和电路模拟方法、电路系统的可靠性、电子设计自动化EDA、神经形态器件和计算系统。目前MGM美高梅登录中心开展的课题包括先进工艺节点CMOS器件建模、新型逻辑和存储器件、铁电神经形态器件、电路模拟器的动态时间演进算法和模型降阶算法、神经形态电路EDA等。

近年来取得的主要成果:

专著/章节:

[1] Lining Zhang and Mansun Chan, Book Editors, Tunneling Field-Effect Transistor Technology, Springer, 2016.

[2] Lining Zhang, Jun Huang, Mansun Chan, “Steep Slope Devices and TFETs,” Chapter 1 of Tunneling Field Effect Transistor Technology, Springer, 2016, pp. 1-31.


代表性期刊文章:

[1] W. Dai, Y. Li, Z. Rong, B. Peng, L. Zhang*, R. Wang*, R. Huang, “Statistical compact modeling with artificial neural networks,” to appear IEEE Trans. Computer-aided Design of Integrated Circuits and Systems, 2023

[2] F. Zhang, H. Li, K. Wang, W. Dai, Y. Jiao, F. Ding, Y. Ren, Y. Wu, W. Bu, Q. Huang, L. Zhang*, R. Huang, “A surface potential based full region current model for Si DS-TFET,” to appear IEEE Trans. Electron Devices, 2023

[3] N. Feng, H. Li, B. Peng, F. Zhang, P. Cai, L. Zhang*, R. Wang*, R. Huang, “Metal-ferroelectric- semiconductor tunnel junction: essential physics and design explorations,” IEEE Trans. Electron Devices, vol. 70, no. 6, pp. 3382-3389, June 2023

[4] Q. Hu, C. Gu, Q. Li, S. Zhu, S. Liu, Y. Li, L. Zhang, R. Huang, Y. Wu, “True nonvolatile high-speed DRAM cells using tailored ultrathin IGZO,” Advanced Materials, vol. 35, no. 20, pp. 2210554, May 2023

[5] C. J. Estrada, Z. Ma, L. Zhang, M. Chan, “Threshold voltage model for 2-D FETs with undoped body and gated source,” IEEE Trans. Electron Devices, vol. 70, no. 5, pp. 2575-2580, May 2023

[6] N. Feng, H. Li, L. Zhang*, N. Ji, F. Zhang, X. Zhu, Z. Shang, P. Cai, M. Li, R. Wang, R. Huang, “A physics-based dynamic compact model of ferroelectric tunnel junctions,” IEEE Electron Device Letters, vol. 44, no. 2, pp. 261-264, Feb. 2023

[7] B. Peng, Y. Jiao, H. Zhong, Z. Rong, Z. Wang, Y. Xiao, W. Wong, L. Zhang*, R. Wang*, R. Huang, “Compact modeling of quantum confinements in nanoscale gate-all-around MOSFETs,” accepted by Fundamental Research, 2022

[8] L. Zhang*, M. Chan, “Editorial: Hardware Implementation of Spike-based Neuromorphic Computing and its Design Methodologies,” Frontiers in NeuroScience, doi: 10.3389/fnins.2022.1113983

[9] D. Wang, L. Zhou, Y. Xue, P. Ren, L. Zhang, X. Li, X. Liu, J. Wang, B. Wu, Z. Ji* , R. Wang*, K. Cao and R. Huang, “Defect-Based Empirical Model for On-State Degradation in Sub-20-nm DRAM Periphery pFETs Under Arbitrary Condition,” IEEE Trans. Electron Devices, vol. 69, no. 12, pp. 6669-6675, Dec. 2022

[10] F. Ding, Y. Jiao, B. Peng, H. Li, W. Liu, L. Zhang*, R. Wang, R. Huang, “Modeling the gradual RESET of phase change memory with confined geometry,” IEEE Trans. Electron Devices, vol. 69, no. 12, pp. 6662-6668, Dec. 2022

[11] Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang, L. Zhang*, R. Huang, “A dynamic current hysteresis model for IGZO-TFT,” Solid-State Electronics, vol. 197, pp. 108459, Sept. 2022

[12] Z. Wang, Y. Lv, L. Zhang, L. Liao, C. Jiang, “Strain release enabled bandgap scaling in Ge nanowire and tunnel FET application,” IEEE Trans. Electron Devices, vol. 69, no. 8, pp. 4725-4729, Aug. 2022

[13] Z. Ma, C. Estrada, K. Gong, L. Zhang*, M. Chan, “On-chip integrated high gain complementary MoS2 inverter circuit with exceptional high hole current p-channel field-effect transistors,” Adv. Elec. Mater., doi.org/10.1002/aelm.202200480, July 2022

[14] Y. Jiao, X. Huang, Z. Rong, Z. Ji, R. Wang, L. Zhang*, “Modeling multigate negative capacitance transistors with self-heating effects,” IEEE Trans. Electron Devices, vol. 69, no. 6, pp. 3029-3036, June. 2022  

[15] N. Feng, H. Li, C. Su, L. Zhang*, Q. Huang, R. Wang, R. Huang, “A dynamic compact model for ferroelectric capacitance,” IEEE Electron Device Letters, vol. 43, no. 2, pp. 390-393, Mar. 2022

[16] F. Ding, B. Peng, X. Li, L. Zhang*, R. Wang, Z. Song, R. Huang, “A review of compact modeling for phase change memory,” J. of Semi., vol. 43, no. 2, pp. 023101, Feb. 2022

[17] F. Ding, D. Dong, Y. Chen, X. Lin, L. Zhang*, “Robust simulations of nanoscale phase change memory: dynamics and retention,” Nanomaterials, vol. 11, no. 11, pp. 2945, Nov. 2021

[18] X. Chen, F. Ding, X. Huang, X. Lin, R. Wang, M. Chan, L. Zhang*, R. Huang, “A robust and efficient compact model for phase change memory circuit simulations,” IEEE Trans. Electron Devices, vol. 68, no. 9, pp. 4404-4410, Sept. 2021

[19] X. Huang, X. Chen, L. Li, H. Zhong, Y. Jiao, X. Lin, Q. Huang, Lining Zhang*, Ru Huang, “A dynamic current model for MFIS negative capacitance transistors,” IEEE Trans. Electron Devices, vol. 68, no. 7, pp. 3665-3671, July 2021

[20] Z. Huang, S. Xiong, N. Dong, Lining Zhang, X. Lin, “A Study of the gate-stack small-signal model and determination of interface traps in GaN-based MIS-HEMT,” IEEE Trans. Electron Devices, vol. 67, no. 4, pp. 1507-1512, Apr. 2021

[21] Z. Ma, Lining Zhang*, C. Zhou, M. Chan, “High current Nb-doped P-channel MoS2 field-effect transistor using Pt contact,” IEEE Electron Device Letters, vol. 42, no. 3, pp. 343-346, Mar. 2021

[22] X. Chen, F. Hu, X. Huang, W. Cai, M. Liu, C. Lam, X. Lin, Lining Zhang*, M.Chan, “A SPICE model of phase change memory for neuromorphic circuits,” IEEE Access, vol. 8, pp.95278-95287, May 2020

[23] Z. Rong, W. Cai, Y. Zhang, P. Wu, X. Li, Lining Zhang*, “On the enhanced Miller capacitance of source- gated thin film transistors,” IEEE Electron Device Letters, vol.41, no.5, pp. 741-744, May 2020

[24] Z. Ahmed, Q. Shi, Z. Ma, Lining Zhang*, H. Guo, M. Chan, “Analytical Monolayer MoS2 MOSFET Modeling Verified by First Principle Simulations,” IEEE Electron Device Letters, vol. 41, no. 1, pp. 171-174, Jan. 2020

[25] H. Hu, D. Liu, X. Chen, D. Dong, X. Cui, M. Liu, X. Lin, Lining Zhang*, M. Chan, “A compact phase change memory model with dynamic state variables,” IEEE Trans. Electron Devices, vol. 67, no. 1, pp. 133-139, Jan. 2020

[26] Lining Zhang*, L. Wang, W. Wu, M. Chan, “Modeling Current–Voltage Characteristics of Bilayer Organic Light-Emitting Diodes,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 139-145, Jan. 2019

[27] Lining Zhang*, C. Ma, Y. Xiao, H. Zhang, X. Lin, M. Chan, “A dynamic time evolution method for concurrent device-circuit aging simulations,” IEEE Trans. Electron Devices, vol. 66, no. 1, pp. 184-190, Jan. 2019


代表性会议文章:

[1] Qing Shi, Lining Zhang*, Yu Zhu, Lei Liu, Mansun Chan, Hong Guo, “Atomic disorder scattering in emerging transistors by parameter-free first principle modeling,’ 2014 IEEE International Electron Device Meeting (IEDM), Dec. 15-17, 2014, San Francisco, USA

[2] Lining Zhang*, Jin He and Mansun Chan, “A Compact Model for Double-Gate Tunneling Field-Effect-Transistors and Its Implications on Circuit Behaviors”, 2012 IEEE International Electron Device Meeting (IEDM), Dec. 10-12, 2012, San Francisco, USA

[3] F. Ding, X. Li, Y. Chen, Z. Song, R. Wang, M. Chan, L. Zhang*, R. Huang, “Compact modeling of phase change memory with parameter extractions,” ESSDERC 2022

[4] Y. Li, X. Huang, C. Liao, R. Wang, S. Zhang, L. Zhang*, R. Huang, “A dynamic current hysteresis model for thin-film transistors,” SISPAD 2022

[3] H. Hu, Lining Zhang, X. Lin, M. Chan, “Modeling the heating effects in PCM for circuit simulation accelerations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.12-14, 2019, Xi’an, China [Best Paper Award]

[4] D. Song, Lining Zhang*, D. Liu, H. Zhang, X. Lin, “An improvement of BSIM for fast circuit simulations,” IEEE Conference on Electron Devices and Solid-State Circuits, June.6-8, 2018, Shenzhen, China [Best Student Paper Award]

[5] P. Wu, C. Ma, Lining Zhang, X. Lin, M. Chan, “Investigation of nitrogen enhanced NBTI effect using the universal prediction model,” 2015 International Reliability Physics Symposium (IRPS), Apr. 19 –23, Monterey, USA

博士后招收:

诚招相关方向的博士后进行合作MGM美高梅研究。详见学院网站的招聘启事。

对计划招收MGM美高梅研究生的基本要求:

1、专业范围:微电子,物理,数学,计算机;

2、乐观、主观能动性、对解决工程问题有好奇心、有团队合作精神